Synthesis, Characterization, and Electrical Properties of Zinc-Doped Aluminium Oxide Thin Films for Optoelectronic Applications
Abstract
This study investigates the synthesis and characterization of zinc-doped aluminium oxide (Al₂O₃) thin films deposited on glass substrates. Zinc doping is introduced to enhance the electrical and structural properties of Al₂O₃ films, which are commonly used in optoelectronic and insulating applications. Thin films were deposited using [insert deposition method] and characterized using several techniques, including PSA ZETA potential measurements, Fourier Transform Infrared Spectroscopy (FTIR), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Transmission Electron Microscopy (TEM). XRD analysis revealed the crystallinity and phase composition of the thin films, while FTIR provided insights into the chemical bonding and functional groups within the films. SEM and TEM images demonstrated the surface and internal morphology, showing [describe any significant features such as grain size, porosity, or thickness]. Electrical properties, specifically DC conductivity, were measured to assess the impact of zinc doping on the films' conductive behaviour. The results indicated that zinc doping significantly improved the conductivity and altered the film morphology, suggesting its potential for enhanced performance in electronic and sensor applications. This research contributes to the development of advanced metal oxide thin films with tailored properties for next-generation devices.
References
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